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part number s3160 revision a ? august 12, 2004 s3160 2.5 gbps wide bandwidth transimpedance amplifier amcc confidential and proprietary 1 data sheet features ? greater than 2 ghz bandwidth ?3 k ? differential transimpedance ? single 3.3 v supply ? 6.5 pa/ (hz) typical noise current density ? 2.2 ma peak to peak max input current ? voltage limited outputs ? maximum die size: 1.27 mm by 1.27 mm applications ? sonet oc-48 ? fiber optic data links general description the s3160 is a high-speed transimpedance amplifier (tia) for 2.5 gbps applications. input currents as high as 2.2 ma can be amplified with low duty cycle distor - tion. the low input noise allows signals down to 4 a (peak to peak) to be detected with a signal to noise ratio of 22 db (allows for ber< 1e-10). the outputs are voltage limited to 1000 mv, differen - tial, in order to allow a wide input dynamic range without exceeding the input voltage range of the post (limiting) amplifier. figure 1 shows a typical application. figure 1. typical operating circuit dinn dinp serdatop serdaton iin gnd outp s3160 s3078 (limiting amp and cdr) zo = 50 ? outn zo = 50 ? rbypass v cc filt alternate connectio n v cc c filt
2 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier detailed description figure 2 depicts the overall block diagram of the s3160 transimpedance amplifier. the amplifier cir - cuitry consists of a transimpedance stage and an output driver stage with a 6 db gain. the transimped - ance amplifier converts the photodiode photocurrent to a voltage. the photodiode can be biased by connect - ing it to the rbypass pin or it can be connected directly to v cc . the amplifier gain is linear for an input of up to 300 a. above that the transimpedance of the input stage is reduced by the action of the schottky diode, to prevent overdrive of the output stage. the output of the output stage begins to fully limit when the input current reaches 700 a. the output voltage is limited at 1000 mv, differential, peak to peak. the output of the transimpedance stage is converted to a differential signal by the combination of the output stage and a bias block. this bias block averages the output of the transimpedance stage and establishes the dc input reference for the output stage. the band - width of this circuit is set by an on-chip capacitor, but can be reduced by adding an off-chip capacitor, c filt . this bandwidth corresponds to the low frequency -3 db cutoff of the tia. increasing the value of c filt will reduce the low frequency -3 db cutoff. with no c filt capacitor added it will be at 45 khz. figure 2. s3160 detailed block diagram v cc gnd rbypass iin outp outn filt bias c filt (optional) 100 ? v cc 1500 ? x 2
s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier amcc confidential and proprietary 3 revision a ? august 12, 2004 data sheet 1. the coordinates represent the position of the center of the p ad in m, with respect to the lower left corner of the circuit die. 2. note: i = input pin, o = output pin, s = supply pin. table 1. s3160 pad assignment and description pin name i/o pad # coordinates [x,y] (1) description vcc s 8 9 10 11 12 [868.9, 1051.4] [669.6, 1051.4] [470.8, 1051.4] [271.8, 1051.4] [90.8, 892.5] +3.3 v power supply. gnd s 1 2 3 4 [273, 91.4] [472, 91.4] [670.8, 91.4] [870.1, 91.4] ground. rbypass i 13 15 [100.925, 702.425] [90.9, 293.3] bypass connection for cathode of photodiode. iin i 14 [97.575, 473.975] pin diode input. filt i 7 [1052.3. 777] filter capacitor input. a capacitor to ground can be added at this pad to reduce the low frequency -3 db cutoff. (see design procedures). outn o 6 [1049.275, 567.475] negative transimpedanc e amplifier output. outp o 5 [1049.275, 375.225] positive transimpedance amplifier output.
4 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier figure 3. s3160 bonding pad location note: pad size is 94 m x 94 m. the exposed area of the pad is 80 m x 80 m. die thickness is 254 m (10 mils). 1. the circuit die size is the smallest possible size of t he die. the lower left-hand corner of the circuit die is the origin of the xy-coordinate system. pad coordinates indicated in table 1 are measured from this origin to the pad's center. 2. the total die size is the largest possible size of the di e. it includes a splicing area around the circuit die. the actual size of any given die may vary in size from the minimum (circuit die) size to the maximum (total die) size. vcc rbypass iin rbypass gnd gnd gnd gnd outn outp filt vcc vcc vcc vcc 1234 5 6 7 8 9 10 11 12 13 14 15 1.15 mm (circuit die size) 1.27 mm (total die size) 1 . 1 5 m m ( c i r c u i t d i e s i z e ) 1 . 2 7 m m ( t o t a l d i e s i z e ) total die size 2 x-axis y-axis (0,0) circuit die size 1
s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier amcc confidential and proprietary 5 revision a ? august 12, 2004 data sheet electrostatic discharge (esd) sensitivity rating - human body model (hbm): the s3160 is rated to the following esd vo ltages based upon jedec standard: jesd22-a114-b class 0 - all pins are rated at or above 1000 volts except pins i in , outp and outn. outp and outn are rated at 500 v and i in is rated to 100 volts. adherence to standards for esd protection should be taken duri ng the handling of the devices to ensure that the devices are not dam - aged. the standards to be used are defined in ansi standard ansi/ esd s20.20-1999, "protection of el ectrical and electronic part s, assemblies and equipment." contact your local fae or sales representative for applicable esd application notes. table 2. recommended operating conditions parameter min typ max units ambient temperature, t a -40 +85 c junction operating temperature, t j -20 +105 c voltage on v cc with respect to gnd 3.135 3.3 3.465 v table 3. absolute maximum ratings the following are the absolute maximum stress ratings for t he s3160. stresses beyond those listed may cause permanent damage to the device. absolute maximum ratings are stre ss ratings only and operation of the device at the maximums stated or any other condit ions beyond those indicated in the "recommended operati ng conditions" of this document are not infe rred. exposure to absolute maximum ratin g condi - tions for extended periods may affect device reliability. parameter min typ max units voltage on v cc with respect to gnd -0.5 4 v voltage on all other pads -0.5 v cc +0.3 v storage temperature range -55 150 c
6 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier note: ac electrical characterist ics are guaranteed by characterization. table 4. ac electrical charac teristics (vcc = 3.3 v 5%, t a = -40c to +85c) parameter description min typ max units conditions r t ac transimpedance 2.56 2.95 3.34 kv/a 50 ohm load bw -3 db bandwidth 2.7 3.2 3.6 ghz 0.5 pf photodiode capacitance, 1.5 nh input bond wire inductance. bw lf low frequency -3 db cutoff 45 57 khz no c filt connected i pk maximum input current 2.2 ma peak-to-peak v od maximum differential output voltage 1000 1200 mv peak-to-peak, differential i in, cl input current before clipping 250 300 a 1 db compression point i nd input noise current density 6.5 9.3 pa/ (hz) 0 - 2.5 ghz i n input noise current 325 465 na (output rms noise)/rt, 2.5 ghz bandwidth j t total jitter (pk to pk) (at 1e-12 ber) 0.12 ui input is 2.488 gbps, 2 23 -1 prbs. i in = 2.2 ma ripple output ripple -0.5 +0.5 db 1 - 2000 mhz group delay group delay variation -25 +25 ps 100 - 2500 mhz s22 output reflection coeffi - cient -18 db 1 - 3500 mhz r out output impedance 45 50 58 ? table 5. dc electrical characteristics (vcc = 3.3 v 5%, t a = -40c to +85c) parameter description min typ max units conditions i cc supply current 40 57 ma v bias input bias voltage 0.79 0.92 1.0 v v cm common mode output voltage v cc -0.9 v cc -0.65 v cc -0.25 v 50 ? line termination to gnd (ac coupled) or 100 ? line-to-line termination.
s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier amcc confidential and proprietary 7 revision a ? august 12, 2004 data sheet design procedures determining capacitor values c filt can be selected using the formula: low frequency ?3 db cutoff = 1 / [2 *400k ? *(10pf + c filt )] application information filtering through rbypass to reduce the effect of supply voltage noise at the cathode of the photodiode, the cathode connection to v cc should be made throug h the rbypass resistor. the rbyp ass resistor and an external capacitor to ground at the cathode of the photodiode will act as a filter to reduce th is noise and dampen any resonance at the cathode of the photodiode. wire bonding and layout information for best performance all gnd pads should be connected and the bond wire inductance between the photodiode and the iin pin should be kept to below 1.5 nh ? 2 nh. the back of the die is not metallized and should be con - nected to ground or left electrically unconnected. the outputs outp and outn should be terminated equally to prevent instabilities. figures 4 and 5 show the differ - ential and single-ended terminations.
8 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier figure 4. output differential termination figure 5. output single-ended termination i in gnd outp s3160 limiting amplifier zo = 50 ? outn zo = 50 ? rbypass vcc vdd filt alternate connection 100 ? c filt i in gnd outp s3160 zo = 50 ? outn zo = 50 ? rbypass vcc vdd filt alternate connection 50 ? c filt 50 ?
s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier amcc confidential and proprietary 9 revision a ? august 12, 2004 data sheet typical operating characteristics figure 6. frequency response (gain vs. frequency) figure 7. eye diagram (at 2.5 gbps) (i in = 2.2 ma) figure 8. output voltage vs. input current figure 9. supply current vs. temperature
10 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier document revision history revision date description a 08/12/04 ? pg. 6, table 4, changed s22 max from -22 db to -18 db; changed r out max from 55 ? to 58 ? . nc 2/28/01 ? production release version.
s3160 ? 2.5 gbps wide bandwidth transimpedance amplifier amcc confidential and proprietary 11 revision a ? august 12, 2004 data sheet ordering information applied micro circuits corporation 6290 sequence dr., san diego, ca 92121 phone: (858) 450-9333 ? (800) 755-2622 ? fax: (858) 450-9885 http://www.amcc.com amcc reserves the right to make changes to its products, its datasheets, or related documentation, without notice and war - rants its products solely pursuant to its terms and conditions of sale, only to substantially co mply with the latest available datasheet. please consult amcc?s term and condi tions of sale for its warranties and ot her terms, conditions and limitations. amcc may discontinue any semiconductor product or service wit hout notice, and advises its customers to obtain the latest version of relevant information to verify , before placing orders, that the informati on is current. amcc does not assume any lia - bility arising out of the application or use of any product or circuit described herein, neither does it convey any license und er its patent rights nor the rights of others. amcc reserves the ri ght to ship devices of higher gr ade in place of those of lower grade. amcc semiconductor products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. amcc is a registered trademark of applied micro circuits cor poration. copyright ? 2005 appli ed micro circuits corporation. prefix package device s?integrated circuit 3160 x xxxx x prefix device package di?industrial grade die

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